Effects of Xe⁺ irradiation on Ti₃SiC₂ at RT and 500 °C

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• 作者：H.H. Shen^a ; ^b ; F.Z. Li^a ; H.B. Zhang^a ; ^{hbzhang@caep.cn" class="auth_mail" title="E-mail the corresponding author} ; S.M. Peng^a ; ^{pengshuming@caep.cn" class="auth_mail" title="E-mail the corresponding author} ; X.T. Zu^c ; K. Sun^b
• 关键词：MAX ; Ti3SiC2 ; Radiation damage ; TiC ; Nano-grain
• 刊名：Journal of the European Ceramic Society
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：37
• 期：2
• 页码：855-858
• 全文大小：2044 K

文摘

In this study, effects of a 400 keV Xe⁺ irradiation on Ti₃SiC₂ were systematically investigated by transmission electron microscopy (TEM). At RT, results show that the Xe⁺ irradiation induced the dissociation of Ti₃SiC₂ to polycrystalline TiC first, and then the polycrystalline to TiC nanograins with the increasing fluence. However, there is no significant microstructure change observed on the sample irradiated at 500 °C. It is demonstrated that Ti₃SiC₂ had not been completely amorpherized even up to 116.9 displacements per atom (dpa).