On the beneficial effect of Al2O3 front contact passivation in Cu(In,Ga)Se2 solar cells
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- 作者：Jan Kellera ; Jan.Keller@angstrom.uu.se" class="auth_mail" title="E-mail the corresponding author ; Fredrik Gustavssona ; Lars Stolta ; b ; Marika Edoffa ; Tobias Tö ; rndahla
- 关键词：CIGSe ; Al2O3 ; Surface passivation ; Atomic layer deposition ; ALD
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：159
- 期：Complete
- 页码：189-196
- 全文大小：2893 K
文摘
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An Al2O3 front contact passivation layer is introduced to Cu(In, Ga)Se2 solar cells.
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The ALD Al2O3 is thin enough to allow for tunneling.
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Detrimental effect of openings in buffer layer is mitigated by passivation.
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CIGSe/Al2O3 interface exhibits lower defect density compared to CIGSe/ZnO interface.
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Heat treatment during Al2O3 deposition induces a larger space charge region width.