Enhanced electrical conductivity and reliability for flexible copper thin-film electrode by introducing aluminum buffer layer

详细信息    查看全文

• 作者：Siliang Yin ; Wei Zhu ; ^{zhu_wei@buaa.edu.cn} ; Yuan Deng ; ^{dengyuan@buaa.edu.cn} ; Yuncheng Peng ; Shengfei Shen ; Yubin Tu
• 关键词：Flexible copper thin-film electrode ; Al buffer layer ; Adhesion ; Electrical conductivity ; Mechanical reliability
• 刊名：Materials & Design
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：116
• 期：Complete
• 页码：524-530
• 全文大小：2421 K
• 卷排序：116

文摘

Aluminum buffer layer is introduced to improve copper crystallinity and reduce thermal stress in the electrode films. The prepared Al-Cu flexible conducting electrodes exhibit high electrical conductivity of 3.05 μΩ·cm. Negligible changes of electrical resistivity for Al(0.86 μm)-Cu thin film is achieved at the bending radius more than 6 mm. The crack evolution is effectively alleviated in Al(0.86 μm)-Cu thin film resulting from better energy recovery capacity. The Al(0.86 μm)-Cu flexible thin-film electrode exhibits strong adhesive ability to 5B-level with polyimide substrate.