Detection of resistive switching behavior based on the Al₂O₃/ZnO/Al₂O₃ structure with alumina buffers

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• 作者：Q. Qiao^a ; D. Xu^a ; Y.W. Li^a ; ^{ywli@ee.ecnu.edu.cn} ; J.Z. Zhang^a ; Z.G. Hu^a ; J.H. Chu^a ; ^b
• 关键词：Non-polar resistive switching ; Transition metal oxide ; Sandwich structure ; Buffer layer
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：623
• 期：Complete
• 页码：8-13
• 全文大小：1241 K
• 卷排序：623

文摘

Non-polar resistive switching was attained by adding Al2O3 buffers to the zinc oxide. All the Al2O3 and ZnO films studied were obtained by the atomic layer deposition. The resistive window over a value of 100 was achieved based on a sandwich structure. A model was put forward to interpret the detailed resistive switching mechanism. The resistive window can be further modulated by controlling the value of Vend.