Cryogenic operation of silicon detectors
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- 作者：Collins ; P. ; Barnett ; I.B.M. ; Bartalini ; P. ; Bell ; W. ; Berglund ; P. ; de Boer ; W. ; Buontempo ; S. ; et. al.
- 关键词：61.82.Fk ; Silicon detectors ; Radiation damage ; Position resolution
- 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- 出版年：2000
- 出版时间：June 1, 2000
- 年：2000
- 卷：447
- 期：1-2
- 页码：151-159
- 全文大小：309 K
文摘
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5×10<sup>14sup> p/cm<sup>2sup> and of a p–n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.