Review on the development of cryogenic silicon detectors
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- 作者：Casagrande ; L. ; Abreu ; M.C. ; Bell ; W.H. ; Berglund ; P. ; de Boer ; W. ; Borer ; K. ; Buontempo ; S. ; Chapuy ; S. ; et. al.
- 关键词：Lazarus ; Cryogenic ; Silicon ; Detectors
- 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- 出版年：2001
- 出版时间：April 1, 2001
- 年：2001
- 卷：461
- 期：1-3
- 页码：150-154
- 全文大小：129 K
文摘
In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed here show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude. In particular, a 400μm thick “double-p” silicon detector irradiated up to 1×10<sup>15sup>n/cm<sup>2sup> delivers a mip signal of about 27000 electrons when operated at 130K and 500V bias. The position resolution of an irradiated microstrip detector, and “in situ” irradiation of a pad detector during operation in the cold are also discussed.