Silicon detectors irradiated “in situ” at cryogenic temperatures
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- 作者：Ruggiero ; G. ; Abreu ; M. ; Bell ; W. ; Berglund ; P. ; de Boer ; W. ; Borer ; K. ; Buontempo ; S. ; Casagrande ; L. ; et. al.
- 关键词：Cryogenics ; Silicon detectors
- 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- 出版年：2002
- 出版时间：January 11, 2002
- 年：2002
- 卷：476
- 期：3
- 页码：583-587
- 全文大小：120 K
文摘
Though several studies have proved the radiation tolerance of silicon detectors at cryogenic temperatures, following room temperature irradiation, no previous investigation has studied the behaviour of detectors irradiated “in situ” at low temperatures. In this work, effects of irradiation of 450GeV protons at 83K will be presented, showing that after a dose of 1.2×10<sup>15sup>pcm<sup>−2sup> a charge collection efficiency (CCE) of 55 % is reached at 200V before the annealing. The same results were found at the end of the irradiation, after the sample has spent more then one year at room temperature. This shows that the CCE recovery by low temperature operation is not affected by the temperature of irradiation and by the reverse annealing.