Band gap engineering and low temperature transport phenomenon in highly conducting antimony doped tin oxide thin films

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• 作者：M.P.S. Rana^a ; ^{mpsrrana@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Fouran Singh^b ; ^{fouran@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Sandhya Negi^a ; Subodh K. Gautam^b ; R.G. Singh^c ; R.C. Ramola^a
• 关键词：Transparent Conducting Oxide (TCO) ; Burstein&ndash ; Moss (BM) shift ; Quantum Confinement ; Amorphization ; Nearest neighbour hopping (NNH) and Variable Range Hopping (VRH)
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：42
• 期：5
• 页码：5932-5941
• 全文大小：2206 K

文摘

A huge band gap tuning and low temperature transport phenomenon in highly transparent antimony doped tin oxide thin film (Sb:SnO₂) under the influence of swift heavy ions irradiation (SHII) is reported. Structural analysis shows an enhancement in crystallinity at initial fluence of irradiation followed by amorphization at higher fluences. Films were also well studied for their surface morphology by atomic force microscopy and scanning electron microscopy. Band gap analysis reveals a drastic band gap narrowing around 1.1 eV upon SHI irradiation. Transport measurements show that the high conductivity and the carrier concentration decrease upon increase in the fluence of irradiation. The mechanism of charge carrier transport investigated at low temperature is attributed to nearest neighbor hopping (NNH) and variable range hopping (VRH) in different temperature regimes. Origin of the band gap tuning is understood in framework of Burstein–Moss (BM) shift, Quantum Confinement (QC) effect and band-tailing states in amorphous semiconductors.