Influence of electronic excitations on structural, optical and electrical properties of undoped and antimony doped tin oxide thin films
详细信息 查看全文
- 作者：M.P.S. Ranaa ; mpsrrana@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Fouran Singhb ; Kanchan Joshia ; Sandhya Negia ; R.C. Ramolaa
- 关键词：Transparent conducting oxide (TCO) ; IV&ndash ; VI semiconductors ; Ion irradiations effects ; Burstein-Moss (BM) shift ; Quantum confinement ; Urbach energy
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：1 October 2016
- 年：2016
- 卷：616
- 期：Complete
- 页码：34-42
- 全文大小：1851 K
文摘
- •
Development of highly transparent undoped and antimony doped tin oxide thin films
- •
Irradiation induced decrease in conductivity of films upon increase in the fluence of irradiation.
- •
Modifications of band gap in undoped films using Quantum Confinement effect
- •
Modifications of band gap in antimony doped tin oxide thin films by Burstein-Moss (BM) shift
- •
Band tail states and their interpretation in terms of Urbach energy