Optical and electrical characteristics of Ga-Zn-O thin films prepared by RF magnetron co-sputtering system

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• 作者：Nam-Jung Kim^a ; ^{njkim36@gmail.com} ; Naeho Shin^a ; Chang-Su Hwang^b
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：68-75
• 全文大小：1814 K
• 卷排序：101

文摘

Ga doped ZnO thin films are prepared on glass substrates by RF magnetron co-sputtering method in which Ga dopant concentrations are varied systematically. Resulting GaZnO films show the optical band gap widening behavior and a sharp rise of the band gap at ~3% doping level, which is attributed to Burstein-Moss effect. The electrical properties are best improved near the ~3% doping concentration at which carrier mobility displays a maximum value.