All-electric spin transistor using perpendicular spins
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- 作者：Ji Hoon Kima ; b ; Joohyung Baea ; c ; Byoung-Chul Mina ; Hyung-jun Kima ; Joonyeon Changa ; Hyun Cheol Kooa ; b ; hckoo@kist.re.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Spin transistor ; Perpendicular spin ; Interface resistance ; Schottky tunnel barrier
- 刊名：Journal of Magnetism and Magnetic Materials
- 出版年：2016
- 出版时间：1 April 2016
- 年：2016
- 卷：403
- 期：Complete
- 页码：77-80
- 全文大小：1903 K
文摘
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We realize all-electric spin-FET using perpendicular spins.
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Gate modulation of spin orientation is detected in a quantum well layer.
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A gate-controlled spin signal as large as 80 mΩ is obtained at 10 K.
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We compare spin injection signals driven by a magnetic field and an electric field.