Electronic transport and carrier concentration in conductive ZnO:Ga thin films

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• 作者：Changwoo Nahm ; Sungjin Shin ; Woojin Lee ; Jae Ik Kim ; Dae-Ryong Jung ; Jongmin Kim ; Seunghoon Nam ; Sujin Byun ; Byungwoo Park
• 关键词：Transparent conducting oxide ; Ga-doped ZnO ; Drude model
• 刊名：Current Applied Physics
• 出版年：2013
• 出版时间：March, 2013
• 年：2013
• 卷：13
• 期：2
• 页码：415-418
• 全文大小：644 K

文摘

Transparent and conductive Ga-doped ZnO (ZnO:Ga) films were post-annealed after sputter deposition, and their structural and electrical properties were investigated. Post-annealing led to an improvement of crystallinity along the [001] direction, but did not change lateral grain size. Therefore, carrier concentration and electron mobility of films were analyzed as a function of crystallinity. The electrical parameters were obtained with both optical reflectance based on the Drude free-electron model and the Hall method, and similar tendencies were observed within the two methods. Even though the lowest resistivity was demonstrated by the film annealed at 550?¡ãC, the optimum values for carrier concentration and mobility were observed in films with different post-annealing temperatures.