MgH2Mg interface doped with both Ti and TiO2 is studied using DFT simulations. Values of work of adhesion confirm dopants notably stabilize MgH2 Mg interface. MD simulations show Ti doping is more efficient in desorption temperature lowering. No noticeable drift of O atoms away from Ti in TiO2 doped interface MD simulation. Presence of oxygen atoms causes shorter TiH bonds and reduced mobility of H atoms.