Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n-GaN Schottky diode

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• 作者：S. Amor^a ; ^b ; A. Ahaitouf^a ; Az Ahaitouf^c ; J.P. Salvestrini^b ; ^d ; ^{jean-paul.salvestrini@univ-lorraine.fr} ; A. Ougazzaden^d
• 关键词：DLTS ; Carrier traps ; GaN ; Schottky diode
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：529-536
• 全文大小：1265 K
• 卷排序：101

文摘

DLTS can be carried out on Schottky diodes to investigate, in addition to majority carrier traps, minority carrier traps. Application of reverse bias decreases the hole effective Schottky barrier height and allows minority carrier injection.