文摘
We report on the X-ray diffraction, secondary ion mass spectrometry, and atomic force microscopy on Ho(123) and Bi(2212) films dc sputtered in pure oxygen atmosphere onto heated sapphire substrates with CeO2 buffer layers. The films were c-axis oriented. The Ho(123) films had a Tc of 88 K but had a relatively high room temperature resistivity of 400 μΩcm. The Bi(2212) films showed a broad transition and a low Tc of 46 K. The data may be explained by a certain amount of Al diffusion and inhomogenous grain growth.