Superconducting, surface and interface properties of Ho(123) and Bi(2212) films on sapphire with cerium oxide buffer layers

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• 作者：Castro ; L.F. ; Suryanarayanan ; R. ; Das ; A. ; Bacca ; E. ; Gó ; mez ; M.E. ; Lopera ; W. ; Prieto ; P. ; et. al.
• 刊名：Solid State Communications
• 出版年：1995
• 出版时间：September, 1995
• 年：1995
• 卷：95
• 期：1
• 页码：829-831
• 全文大小：277 K

文摘

We report on the X-ray diffraction, secondary ion mass spectrometry, and atomic force microscopy on Ho(123) and Bi(2212) films dc sputtered in pure oxygen atmosphere onto heated sapphire substrates with CeO₂ buffer layers. The films were c-axis oriented. The Ho(123) films had a T_c of 88 K but had a relatively high room temperature resistivity of 400 μΩcm. The Bi(2212) films showed a broad transition and a low T_c of 46 K. The data may be explained by a certain amount of Al diffusion and inhomogenous grain growth.