Reprint of “The effect of Ar plasma etching time on the microstructure, optical and photoelectric properties of CdZnTe films”
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文摘

CdZnTe films were treated by Ar plasma etching process with various etching time.

The structure and surface roughness of the film was closely related to etching time.

The CdZnTe film with 5 min plasma etching showed lower dark-current.

CdZnTe films with 5 min plasma etching showed better photo-response to UV light.

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