High open-circuit voltage of ternary Cu₂GeS₃ thin film solar cells from combustion synthesized Cu-Ge alloy

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• 作者：Xin Jin ; Lijian Zhang ; Guoshun Jiang ; Weifeng Liu ; ^{liuwf@ustc.edu.cn} ; Changfei Zhu ; ^{cfzhu@ustc.edu.cn}
• 关键词：Cu2GeS3 ; Thin film solar cell ; Combustion method ; Ternary compound ; Band gap
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：160
• 期：Complete
• 页码：319-327
• 全文大小：1493 K
• 卷排序：160

文摘

Cu2GeS3 is creatively synthesized from Gu-Ge alloy prepared by combustion method. The optical band gap of Cu2GeS3 is determined to be 1.5 eV measured by UV–Vis. The Cu2GeS3 has a proper carrier concentration of 1016 cm−3 lower than Cu2SnS3. 2.67% efficiency Cu2GeS3 solar cell is obtained with a large Voc of 592 mV.