Tailored electrical properties with enhanced fracture toughness in Pb_0.99(Zr_0.95Ti_0.05)_0.98Nb_0.02O₃ ferroelectric ceramics

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• 作者：Hengchang Nie ; Xianlin Dong ; Xuefeng Chen ; Genshui Wang ; Hongliang He ; Yusheng Liu ; Yan Gu
• 关键词：A. Ceramics ; D. Dielectric properties ; D. Ferroelectricity
• 刊名：Materials Research Bulletin
• 出版年：2013
• 出版时间：September, 2013
• 年：2013
• 卷：48
• 期：9
• 页码：3088-3091
• 全文大小：1008 K

文摘

Pb_0.99(Zr_0.95Ti_0.05)_0.98Nb_0.02O₃ ferroelectric ceramics doped with Sm₂O₃ were prepared and the influence of Sm₂O₃ doping levels on the microstructures, the dielectric, ferroelectric, piezoelectric properties as well as fracture toughness was investigated. When the doping concentration of Sm₂O₃ spans from 0 to 7.5 at. % , the maximum permittivity decreases from ¡«20,000 to ¡«5000, the remnant polarization from 35 to 4 ¦ÌC/cm², the d₃₃ from 67 pC/N to 8 pC/N, while the fracture toughness of the ceramics are enhanced to 2.1 MPa m^1/2. From the viewpoint of microstructure tailoring for the energy storage density control, the doped ceramics realized an optimization between the tailored electrical properties and the high mechanical properties, which is promising to substitute porous PZT in pulsed power supply.