R
adi
ation h
ardne
ss up to 10<
sup>16
sup>
n<
sub>eq
sub>/cm<
sup>2
sup> i
s req
uired in the f
ut
ure HEP experiment
s for mo
st inner detector
s. However, 10<
sup>16
sup>
n<
sub>eq
sub>/cm<
sup>2
sup> fl
uence i
s well beyond the r
adi
ation toler
ance of even the mo
st
adv
anced
semicond
uctor detector
s f
abric
ated by commonly
adopted technologie
s: the c
arrier tr
apping will limit the ch
arge collection depth to
an effective r
ange of 20–30 μm reg
ardle
ss of depletion depth. Signific
ant improvement of the r
adi
ation h
ardne
ss of
silicon
sen
sor
s h
as been t
aken pl
ace within RD39. Fort
un
ately the cryogenic tool we h
ave been
using provide
s us a convenient w
ay to
solve the detector ch
arge collection efficiency (CCE) problem
at SLHC r
adi
ation level (10<
sup>16
sup>
n<
sub>eq
sub>/cm<
sup>2
sup>). There
are two key
appro
ache
s in o
ur effort
s: (1)
use of the ch
arge/c
urrent injection to m
anip
ul
ate the detector intern
al electric field in
such
a w
ay th
at it c
an be depleted
at
a mode
st bi
as volt
age
at cryogenic temper
at
ure r
ange (
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230 K);
and (2) freezing o
ut of the tr
apping center
s th
at
affect
s the CCE
at cryogenic temper
at
ure
s lower th
an th
at of the LN<
sub>2
sub> temper
at
ure.
In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures. In this approach, we intend to study the trapping effect at temperatures below LN<sub>2sub> temperature. A freeze-out of trapping can certainly help in the development of ultra-radiation hard Si detectors for SLHC. A detector CCE measurement system using ultra-fast picosecond laser with a He cryostat has been built at CERN. This system can be used to find out the practical cryogenic temperature range that can be used to freeze out the radiation-induced trapping levels, and it is ready for measurements on extremely heavily irradiated silicon detectors. Initial data from this system will be presented.