文摘
We clarified the near-UV effect on CF4 plasma-etched Al0.24Ga0.76N surfaces. The UV effect reduced the amounts of F, AlFx, and GaFx incorporated in the surface. The UV effect enhanced the amount of CFx incorporated in the surface. The UV effect did not influence the degree of nitrogen-deficit caused in the surface. The UV effect changed the morphology of the surface etched at a high gas pressure.