A CZTSe solar cell with 8.2% power conversion efficiency fabricated using electrodeposited Cu/Sn/Zn precursor and a three-step selenization process at low Se pressure
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- 作者：Liyong Yaoa ; Jianping Aoa ; Ming-Jer Jengb ; c ; mjjeng@mail.cgu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Jinlian Bia ; Shoushuai Gaoa ; Guozhong Suna ; Qing Hea ; Zhiqiang Zhoua ; Yun Suna ; Liann-Be Changb ; c
- 关键词：Cu2ZnSnSe4 (CZTSe) thin films ; Molybdenum diselenide (MoSe2) ; Three-step selenization ; The loss of Sn ; Low Se vapor pressure
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：159
- 期：Complete
- 页码：318-324
- 全文大小：986 K
文摘
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Three-step selenization at low Se pressure is performed on an electrodeposited Cu/Sn/Zn precursor.
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No chemical etching is required before CdS deposition.
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The loss of Sn and the formation of molybdenum diselenide in the CZTSe thin films are negligible.
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CZTSe solar cells with an efficiency of as high as 8.2% can be obtained.