Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions

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• 作者：C.J. Tang^a ; ^b ; ^{tang.chunjiu@ua.pt} ; Haihong Hou^a ; A.J.S. Fernandes^b ; X.F. Jiang^a ; J.L. Pinto^b ; H. Ye^c
• 关键词：A1. Defects ; A1. Nanostructures ; A3. Microwave plasma chemical vapour deposition processes ; B1. Diamond ; B1. Nanomaterials
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：460
• 期：Complete
• 页码：16-22
• 全文大小：931 K
• 卷排序：460

文摘

First study of H defects in NCD films grown with N2 additive in CH4/H2 plasma by FTIR. The new H related sharp absorption peak appears stronger with increasing power >3 kW. NCD films grown with N2/CH4/H2 plasma at high powers have a large amount of H defects.