Effect of InGaN back barrier layer AIInN/AlN/GaN MOS-HEMTs are investigated and a comparison is made without back barrier.
2D Sentaurus TCAD hydrodynamic mobility model is used for simulation.
InGaN back barrier device featured better electrostatic control and better confinement of 2DEG.
There is significant improvement in short channel effects, analog and RF performance with respect to without back barrier layer.