Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs
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- 作者：Sanjit Kumar Swaina ; sanjit.swain@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Sarosij Adakc ; Sudhansu Kumar Patia ; Chandan Kumar Sarkarb
- 关键词：InGaN back barrier ; InAlN/GaN heterostructure ; Short channel effects ; 2DEG ; Heterostructure ; MOSHEMT
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：97
- 期：Complete
- 页码：258-267
- 全文大小：1709 K
文摘
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Effect of InGaN back barrier layer AIInN/AlN/GaN MOS-HEMTs are investigated and a comparison is made without back barrier.
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2D Sentaurus TCAD hydrodynamic mobility model is used for simulation.
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InGaN back barrier device featured better electrostatic control and better confinement of 2DEG.
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There is significant improvement in short channel effects, analog and RF performance with respect to without back barrier layer.