Resistive random access memories fabricated by using solution-processed AlZnSnO semiconductor films and indium ball electrodes

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• 作者：Chih-Chieh Hsu^a ; ^b ; ^c ; ^{cchsu@yuntech.edu.tw} ; Yu-Ting Chen^c ; Che-Chang Tsao^c
• 关键词：Thin films ; Semiconductor devices ; Electrical characteristic ; Solution process ; Memories
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：5 March 2017
• 年：2017
• 卷：696
• 期：Complete
• 页码：697-700
• 全文大小：1128 K
• 卷排序：696

文摘

Simplified, low-cost, and low-temperature fabrication of an AlZnSnO ReRAM. The maximum process temperature is 120 °C. Study of resistive switching characteristic of solution-processed AlZnSnO films. Demonstration of an AlZnSnO ReRAM with an indium ball electrode.