Effects of sol aging on resistive switching behaviors of HfO_x resistive memories

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• 作者：Chih-Chieh Hsu^a ; ^b ; ^c ; ^{cchsu@yuntech.edu.tw} ; Jhen-Kai Sun^c ; Che-Chang Tsao^c ; Yu-Ting Chen^c
• 关键词：Semiconductor devices ; Electrical characteristic ; Thin films ; Solution process ; Aging
• 刊名：Physica B: Condensed Matter
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：508
• 期：Complete
• 页码：98-103
• 全文大小：776 K
• 卷排序：508

文摘

This work investigates effects of long-term sol-aging time on sol-gel HfOx resistive random access memories (RRAMs). A nontoxic solvent of ethanol is used to replace toxic 2-methoxyethanol, which is usually used in sol-gel processes. The top electrodes are fabricated by pressing indium balls onto the HfOx surface rather than by using conventional sputtering or evaporation processes. The maximum process temperature is limited to be 100 ℃. Therefore, influences of plasma and high temperature on HfOx film can be avoided. Under this circumstance, effects of sol aging time on the HfOx films can be more clearly studied. The current conduction mechanisms in low and high electric regions of the HfOx RRAM are found to be dominated by Ohmic conduction and trap-filled space charge limited conduction (TF-SCLC), respectively. When the sol aging time increases, the resistive switching characteristic of the HfOx layer becomes unstable and the transition voltage from Ohmic conduction to TF-SCLC is also increased. This suggests that an exceedingly long aging time will give a HfOx film with more defect states. The XPS results are consistent with FTIR analysis and they can further explain the unstable HfOx resistive switching characteristic induced by sol aging.