Band engineering of a Si quantum dot solar cell by modification of B-doping profile
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- 作者：Gyea Young Kwaka ; b ; Seong Hyun Leea ; Jong Shik Janga ; Songwoung Honga ; b ; Ansoon Kima ; b ; Kyung Joong Kima ; b ; kjkim@kriss.re.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Band engineering ; Si Quantum dot ; Solar cell ; Electric Field ; Doping profile
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：159
- 期：Complete
- 页码：80-85
- 全文大小：1172 K
文摘
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A Si quantum dot (QD) heterojunction solar cell with a p-type Si QD layer on an n-type crystalline Si wafer was developed.
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A Si QD solar cell having a Si QD layer with a double-step B-doping profile was suggested to enhance the vertical charge carrier transport in the Si QD layer.
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B-doping profile change from a single-step to double-step, the PCE of the Si QD solar cell increased from 14.41 % to 14.98 %.