Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate

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• 作者：Changchun Chen ; Benhai Yu ; Jiangfeng Liu ; Jianqing Cao ; Dezhang Zhu and Zhihong Liu
• 关键词：Strain relaxation ; UHVCVD ; Ion implantation ; SiGe
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2005
• 出版时间：2005
• 年：2005
• 卷：239
• 期：4
• 页码：433-439
• 全文大小：347 K

文摘

Si_1−xGe_x thin films on the Ar⁺ ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 × 10¹⁵ cm⁻²) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to characterize these Si_1−xGe_x films. Investigations by Rutherford backscattering spectroscopy/channeling (RBS/C) demonstrate that thin Si_0.81Ge_0.19 films could be epitaxially grown on the ion-implanted Si substrates, although there existed obvious crystal defects. These relaxation extents of Si_0.81Ge_0.19 films on the Ar⁺ implanted Si substrates are larger than that in the un-implanted case, which were determined by Raman spectra. Atomic force microscopy was used to determine the surface morphology of Si_0.81Ge_0.19 films. The microstructures of these SiGe/Si hetero-epitaxial materials were investigated by transmission electron microscopy (TEM). All the experimental results demonstrated that a highly relaxed (relaxation extent of 82.3 % ) Si_0.81Ge_0.19 thin film (50 nm) growing on the 30 keV Ar⁺ ion-implanted Si substrate is optimal, which is compared to those SiGe films grown on the ion-implanted Si substrate under other implantation condition.