Performance of GAA InAs nanowire transistor has been studied using SiO2, ZrO2, HfO2 and La2O3 as gate dielectrics.
La2O3 shows improved device performance in terms of Ion, Ioff, gm and Ion/Ioff
La2O3 has exceptional capability of suppressing the short channel effects (SCEs).
Problem of leakage current associated with thinning of gate oxide has been solved by La2O3.
La2O3 as gate dielectric could be used for ultra-fast, low power and high performance nanowire transistors.