The study on the properties of black multicrystalline silicon solar cell varying with the diffusion temperature

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• 作者：Sihua Zhong^a ; ^b ; Bangwu Liu^b ; ^{liubangwulbw@163.com} ; Yang Xia^b ; ^{xiayang@ime.ac.cn} ; Jinhu Liu^b ; Jie Liu^b ; Zenan Shen^b ; Zheng Xu^a ; Chaobo Li^b
• 关键词：black silicon ; diffusion temperature ; multicrystalline silicon solar cell
• 刊名：Energy Procedia
• 出版年：2012
• 出版时间：2012
• 年：2012
• 卷：14
• 期：Complete
• 页码：505-511
• 全文大小：364 K

文摘

The black multi-crystalline silicon (mc-Si) has been successfully produced by plasma immersion ion implantation. The microstructure and the reflectance of the black mc-Si have been investigated by atomic force microscope and spectrophotometer, respectively. Results show that the black mc-Si exhibits a hillock structure with a low reflectance. Besides, with decreasing the diffusion temperature, the external quantum efficiency of the black mc-Si solar cell increases below ?50 nm wavelength due to reduced surface recombination. The optimal conversion effieciency of the black mc-Si solar cell is 15.50 % at the diffusion temperature of 825 ¡ãC. Furthermore, it is interesting to find that there are something different between black mc-Si and acid etched mc-Si on the impact of diffusion.