Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures

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• 作者：Hang Zang^a ; ^{zanghang@xjtu.edu.cn} ; Weilin Jiang^b ; ^{weilin.jiang@pnnl.gov} ; Wenbo Liu^a ; Arun Devaraj^b ; Danny J. Edwards^b ; Charles H. Henager Jr.^b ; Richard J. Kurtz^b ; Tao Li^a ; Chaohui He^a ; Di Yun^a ; Zhiguang Wang^c
• 关键词：He and Kr cavities ; Vacancy effect ; High-temperature annealing ; Ion irradiation ; 3C-SiC
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2016
• 出版时间：15 December 2016
• 年：2016
• 卷：389-390
• 期：Complete
• 页码：40-47
• 全文大小：3046 K
• 卷排序：389

文摘

He and Kr cavities are formed in ion-implanted and 1600 °C annealed 3C-SiC. A higher vacancy concentration leads to formation of cavities with a smaller size and higher density. Presence of He in irradiated 3C-SiC can significantly promote cavity growth. Small voids are formed in Kr ion penetrated 3C-SiC during thermal annealing at 1600 °C. Local Kr migration and trapping at cavities in SiC are observed, but long-range Kr diffusion does not occur at 1600 °C.