Electrical and optical characteristics of aerosol assisted CVD grown ZnO based thin film diode and transistor

详细信息    查看全文

• 作者：Vipin K. Kaushik^a ; ^{vip08007@gmail.com} ; ^{vipink@sgsits.ac.in} ; C. Mukherjee^b ; ^c ; ^{cmukh@rrcat.gov.in} ; Tapas Ganguli^c ; ^d ; ^{tapas@rrcat.gov.in} ; P.K. Sen^a ; ^{prakusen@rediffmail.com}
• 关键词：Aerosol assisted chemical vapor deposition ; X-ray diffraction ; Thin film diode and transistor ; X-ray photoelectron spectroscopy ; Richardson constant and barrier height
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：5 March 2017
• 年：2017
• 卷：696
• 期：Complete
• 页码：727-735
• 全文大小：2016 K
• 卷排序：696

文摘

Characterization of AACVD grown thin film Mott barrier diode and transistor. Average transmittance of single and multilayer thin films ranges from 80 to 95%. Linear dependency of barrier height and exponential decrease of ideality factor. Transfer and output characteristics resembles the p-channel TFT structure. X-ray photonelectron spectroscopy confirm the deposition of desired films.