Chemically-assisted ion-beam etching of (AlGa)As/GaAs: lattice damage and removal by in-situ Cl₂ treatment

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• 作者：Daleiden ; J. ; et. al.
• 关键词：Semiconductor ; Dry etching ; Chemically-assisted ion-beam etching (CAIBE) ; Lattice damage ; In-situ Cl₂-treatment ; (AlGa)As/GaAs&ndash ; SQW structures
• 刊名：Microelectronic Engineering
• 出版年：1999
• 出版时间：February 1, 1999
• 年：1999
• 卷：45
• 期：1
• 页码：9-14
• 全文大小：461 K

文摘

We evaluated the lattice damage in Al_0.4Ga_0.6As/GaAs Single Quantum Well (SQW) structures caused by Chemically-Assisted Ion-Beam Etching (CAIBE) in comparison with Ion-Beam Etching (IBE) and wet etching. The damage was analyzed by measuring the Photoluminescence (PL) of the SQWs as a function of the etch depth. While IBE (E_kin=400 eV) causes a damaged region of 27 nm depth, BCl₃/Cl₂-CAIBE (E_kin=400 eV) damages to a depth of 10 nm. An in-situ Cl₂-treatment (C1₂-flow=6 sccm, T_Substrate=120°C, p=3×10⁻⁴ mbar, without plasma) allows a pure chemical removal of the surface layer which was damaged by CAIBE. This combined process facilitates anisotropic etching together with a lattice damage as low as with wet etching.