Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area
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- 作者：Chong Wang ; chongw@xidian.edu.cn ; Meng-Di Zhao ; Yun-Long He ; Xue-Feng Zheng ; Xiao-Xiao Wei ; Wei Mao ; Xiao-Hua Ma ; Jin-Cheng Zhang ; Yue Hao
- 关键词：AlGaNGaN ; HEMT ; Ohmic contact ; Patterned etching ; Surface morphology
- 刊名：Solid-State Electronics
- 出版年：2017
- 出版时间：March 2017
- 年：2017
- 卷：129
- 期：Complete
- 页码：114-119
- 全文大小：1773 K
- 卷排序：129
文摘
A process called “patterned etching” is presented to reduce the contact resistance on the AlGaN/GaN heterostructure. The lowest contact resistance of 0.18 Ω mm was realized by patterned etching structures. Different apertures of holes were set on patterned etching structures.