Recovering near-band-edge ultraviolet responses in a wide-bandgap oxide with dipole-forbidden bandgap transition
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- 作者：Rui Denga ; b ; Yong-Feng Lib ; c ; liyongfeng@jlu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Bin Yaob ; c ; binyao@jlu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Zhan-Hui Dingb ; Xuan Fangd ; Jie-Ming Qina ; Zhi-Peng Weid ; Qing-Cheng Lianga ; Lei Liue
- 关键词：SnO2 nanobelt ; Ultraviolet photodiode ; First-principles calculation ; Photoluminescence
- 刊名：Journal of Alloys and Compounds
- 出版年：2015
- 出版时间：15 November 2015
- 年：2015
- 卷：649
- 期：Complete
- 页码：625-629
- 全文大小：1534 K
文摘
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A SnO2 nanobelts/p-Si heterojunction photodiode are fabricated.
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Dipole-forbidden bandgap transition of bulk SnO2 is broken in SnO2 nanobelts.
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An ultraviolet peak responsivity of ∼10−4 A/W at 395 nm is observed.
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An ultraviolet–visible rejection ratio of two orders of magnitude is observed.