Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers
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- 作者：C.H. Wu ; P.Y. Lee ; K.Y. Chen ; Y.T. Tseng ; Y.L. Wang ; K.Y. Cheng ; kycheng@ee.nthu.edu.tw" class="auth_mail" title="E-mail the corresponding author
- 关键词：Selective area growth ; Nanowires ; GaN ; AlN ; Photoluminescence
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 November 2016
- 年：2016
- 卷：454
- 期：Complete
- 页码：71-81
- 全文大小：3307 K
文摘
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Systematic study conditions of selective area growth of GaN nanowires on Si(111).
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Thin AlN seeding layer required for GaN nanowire growth is optimized.
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The density of SAG GaN nanowires achieved is the highest (2E9 cm−2).
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Origin of major photoluminescence emission peaks of nanowires is identified.