Analysis of the photovoltaic properties of n-type compensated silicon solar cells with the Al-alloyed emitter

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• 作者：Chengquan Xiao ; Deren Yang ; Xuegong Yu ; ^{yuxuegong@zju.edu.cn} ; Rong Wang ; Duanlin Que
• 关键词：Al-alloyed emitter ; n-Type compensated silicon ; Solar cell
• 刊名：Journal of Alloys and Compounds
• 出版年：2013
• 出版时间：5 June, 2013
• 年：2013
• 卷：561
• 期：Complete
• 页码：28-32
• 全文大小：698 K

文摘

N-type compensated silicon has attracted much attention in recent years, due to its low cost and large tolerance to most impurities. In this paper we have investigated the photovoltaic properties of n-type compensated silicon solar cells with the Al-alloyed emitter. It is found that the open-circuit voltage is strongly influenced by the Al-alloyed emitter depth and the shallow depth might cause shunt paths. The short-circuit current is mainly limited by the moderate minority carrier diffusion length in n-type compensated silicon, which originates from the large net doping electron concentration and the great amount of total dopants. Combined with the experimental information, the simulation suggests that the short-circuit current can be strongly improved by using thinner wafers and therefore the conversion efficiency could get significantly improved. These results are of interest for understanding the potential of n-type compensated silicon in the fabrication of high-efficiency and low-cost solar cells.