Effect of dopant compensation on the performance of Czochralski silicon solar cells

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• 作者：Chengquan Xiao ; Deren Yang ; Xuegong Yu ; ^{yuxuegong@zju.edu.cn} ; Peng Wang ; Peng Chen ; Duanlin Que
• 关键词：Solar cells ; Czochralski silicon ; Dopant compensation ; Carrier mobilities ; Efficiency
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2012
• 出版时间：June, 2012
• 年：2012
• 卷：101
• 期：Complete
• 页码：102-106
• 全文大小：292 K

文摘

We have investigated the effect of boron (B) and phosphorus (P) compensation on the performance of Czochralski (CZ) silicon solar cells. Both majority and minority carrier mobilities are significantly reduced by the dopant compensation. Correspondingly, the minority carrier diffusion length becomes smaller. The compensated silicon solar cells show weaker spectral responses and therefore lower short-circuit current. However, the open-circuit voltage can be influenced by the net doping concentration in our silicon wafers. A higher open-circuit voltage could be obtained from the compensated solar cells due to its larger net doping concentration. As a result, the compensated solar cells could have the same efficiency as the conventional ones. It suggests that the dopant compensation in silicon with a doping level of ?0¹⁷ cm^? is not a serious issue for the improvement of solar cell efficiency. The results are of significance for the upgraded metallurgical grade silicon (UMG-Si) application in the fabrication of high efficiency and low-cost solar cells.