Degradation behavior of electrical properties of inverted metamorphic tri-junction solar cells under 1 MeV electron irradiation
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- 作者：Yanqing Zhanga ; Yiyong Wua ; wuyiyong@hit.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Huijie Zhaoa ; Chengyue Sunb ; Jingdong Xiaoa ; Hongbin Genga ; Jianwen Xuec ; Jianfeng Luc ; Yi Wangd
- 关键词：IMM3J ; Electron irradiation ; Degradation model ; Spectral response ; Electrical properties ; Photoluminescence (PL)
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：157
- 期：Complete
- 页码：861-866
- 全文大小：992 K
文摘
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We study the degradation effects of 1 MeV electron irradiation upon IMM3J cells.
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We utilize spectral response analysis combined with photoluminescence measurements.
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Short-circuit current, open-circuit voltage, and max power degrade with fluence.
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The bottom In0.3Ga0.7As (1.0 eV) sub-cell exhibits the most severe damage.
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The effective minority carrier lifetime degrades most drastically for In0.3Ga0.7As.