Temperature-dependent photovoltaic properties of 54-μm-thick InGaP/InGaAs/Ge triple-junction solar cell on flexible substrate
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- 作者：Eun Hye Lee ; eunhyelee79@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Jae Seong Yeo ; Jung Hun Lee ; Dong Ik Cheong
- 关键词：III-V multijunction solar cell ; AM0 ; Flexible substrate ; Temperature-dependence
- 刊名：Current Applied Physics
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：16
- 期：12
- 页码：1674-1679
- 全文大小：514 K
文摘
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Power conversion efficiency of a 54 μm-thick InGaP/InGaAs/Ge trple-junction solar cell was investigated at −150 °C–+150 °C under AM0 condition.
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Temperature-dependent external quantum efficiency of transferred thinned solar cell was investigated.
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A structural deformation was observed in the transferred thinned solar cell.
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The deformation affected the temperature-dependent photovoltaic properties of the transferred thinned solar cell.