Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors
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- 作者：Chia-Ping Hsiehb ; Ming-Han Liaob ; mhliaoa@ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Chang-Chun Leea ; changchunlee@cycu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Tsung-Chieh Chengc ; Chien-Ping Wanga ; Pei-Chen Huanga ; Sen-Wen Chenga
- 关键词：Strained silicon germanium ; Compressive contact etch stop liner ; Device stress ; Numerical simulation ; Mobility gain ; Shallow trench isolation
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：1 November 2016
- 年：2016
- 卷：618
- 期：part_PA
- 页码：172-177
- 全文大小：1355 K
文摘
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Geometrical effects of 20 nm nano-scaled devices integrated with layout patterns are studied.
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Recessed depths of hallow trench isolation (STI) and area of dummy oxide definition are considered.
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Stress impacts on mobility gains of a short channel are estimated.
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Stress components of the Si channel are acquired by using 3D process-oriented simulations.
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STI recessed depth of present layouts is unfavorable to mobility enhancements.