Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition

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• 作者：Yen-Chin Huang ; Zhen-Yu Li ; Hung-hsin Chen ; Wu-Yih Uen ; Shan-Ming Lan ; Sen-Mao Liao ; Yu-Hsiang Huang ; Chien-Te Ku ; Meng-Chu Chen ; Tsun-Neng Yang ; Chin-Chen Chiang
• 关键词：Chemical vapor deposition (CVD) ; Electrical properties and measurements ; Gallium ; Optical properties ; Scanning electron microscopy ; Water ; X-ray diffraction ; Zinc oxide
• 刊名：Thin Solid Films
• 出版年：2009
• 出版时间：31 July 2009
• 年：2009
• 卷：517
• 期：18
• 页码：5537-5542
• 全文大小：586 K

文摘

Ga-doped zinc oxide (ZnO:Ga) films were grown on glass substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using diethylzinc and water as reactant gases and triethyl gallium (TEG) as an n-type dopant gas. The structural, electrical and optical properties of ZnO:Ga films obtained at various flow rates of TEG ranging from 1.5 to 10 sccm were investigated. X-ray diffraction patterns and scanning electron microscopy images indicated that Ga-doping plays an important role in forming microstructures in ZnO films. A smooth surface with a predominant orientation of (101) was obtained for the ZnO:Ga film grown at a flow rate of TEG = 7.5 sccm. Moreover, a lowest resistivity of 3.6 × 10^− 4 Ω cm and a highest mobility of 30.4 cm² V^− 1 s^− 1 were presented by the same sample, as evaluated by Hall measurement. Otherwise, as the flow rate of TEG was increased, the average transmittance of ZnO:Ga films increased from 75 % to more than 85 % in the wavelength range of 400–800 nm, simultaneously with a blue-shift in the absorption edge. The results obtained suggest that low-resistivity and high-transparency ZnO films can be obtained by AP-MOCVD using Ga-doping sufficiently to make the films grow degenerate and effect the Burstein–Moss shift to raise the band-gap energy from 3.26 to 3.71 eV.