The recombination decreases drastically with increasing TiO₂ thickness on p, n and p⁺(c-Si) surfaces, and saturates at 15 nm.

Effective passivation were achieved on both undiffused n-type (J₀=6.4 fA/cm²) and p-type (J₀=7.3 fA/cm²) (c-Si) wafers, as well as boron-diffused p⁺ surfaces (J₀=19 fA/cm²), without any post deposition treatment.

Planar {111} Si exhibits a 1.39-fold higher recombination than planar {100} Si; and recombination at a textured surface is similar about 1.37 times to that at a planar {111} after surface area correction.

Application of a single layer TiO₂ ARC on rear locally-diffused p⁺nn⁺solar cells resulted in average cell efficiency over 20% and the best efficiency of 20.45%.