High voltage pulsed electrochemical deposition technique (−50 V) is employed.
Nanowire arrays exhibit high coercivities (>1600 Oe).
Crystallites with high crystallinity and different growth orientations are discovered in the nanowires.
The high-energetic reduced atoms can stack on the usually reported (110) plane together with (111) or (211) plane.
The shape difference between two magnetization hysteresis loops is due to dipolar magnetostatic interaction.