Pressure-induced semiconductor-metal phase transition in Mg₂Si

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• 作者：Wanbin Ren^a ; ^b ; Yonghao Han^a ; Cailong Liu^a ; Ningning Su^a ; Yan Li^a ; Boheng Ma^c ; Yanzhang Ma^d ; Chunxiao Gao^a ; ^{cxgao599@yahoo.com.cn}
• 关键词：A. Semiconductors ; D. Phase transitions ; E. High pressure
• 刊名：Solid State Communications
• 出版年：2012
• 出版时间：March 2012
• 年：2012
• 卷：152
• 期：5
• 页码：440-442
• 全文大小：498 K

文摘

In situ electrical resistivity measurement of powdered Mg₂Si has been performed in a diamond anvil cell up to 25.4?GPa. At about 22.2?GPa, Mg₂Si underwent a pressure-induced semiconductor-metal phase transition that took place in the Ni₂In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.