Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors

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• 作者：Vá ; clav Prochá ; zka^a ; ^b ; ^{prochazkav@fzu.cz} ; ^{prochva4@fel.cvut.cz} ; Michal Cifra^c ; Pavel Kulha^a ; ^b ; Tibor Ižá ; k^b ; Bohuslav Rezek^a ; ^b ; Alexander Kromka^b ; ^d
• 关键词：Nanocrystalline diamond ; Yeast cells ; Field-effect transistor ; Transfer characteristics ; pH sensitivity
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：214-219
• 全文大小：1878 K
• 卷排序：395

文摘

Interaction of non-adherent yeast cells with H-terminated diamond described. Effect of cell culture solutions on H-diamond SGFET (positive potential shifts). H-diamond sensitive to metabolic activity of yeast cells (negative potential shift).