Piezoelectric response of AlGaN/GaN-based circular-HEMT structures

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• 作者：T. Lalinský ; ^a ; M. Drž ; í ; k^b ; G. Vanko^a ; ^{gabriel.vanko@savba.sk"" rel=""nofollow} ; ^{eleklali@savba.sk"" rel=""nofollow} ; M. Vallo^a ; V. Kutiš ; ^c ; J. Bruncko^b ; Š ; . Haš ; č ; í ; k^a ; J. Jakovenko^d ; M. Husá ; k^d
• 关键词：Stress sensor ; AlGaN/GaN ; HEMT ; Piezoelectric response ; SiC
• 刊名：Microelectronic Engineering
• 出版年：2011
• 出版时间：August 2011
• 年：2011
• 卷：88
• 期：8
• 页码：2424-2426
• 全文大小：371 K

文摘

This papers reports, for the first time, on a piezoelectric response investigation of AlGaN/GaN-based circular high electron mobility transistor (C-HEMT) structures, which can be potentially applied in new devices for dynamic pressure and stress sensing. We present the processing technology and a piezoelectric performance analysis of the C-HEMT devices. The analysis obtained experimentally is compared with the results of electro-mechanical simulation. The measurements and simulations revealed a good linearity in the piezoelectric response and excellent stress detection sensitivity that is independent from the frequency range measured. The detection sensitivity of the C-HEMT stress sensor can be easily tuned by design of the Schottky ring gate area.