Evolution of small defect clusters in ion-irradiated 3C-SiC: Combined cluster dynamics modeling and experimental study

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• 作者：C. Liu^a ; L. He^b ; Y. Zhai^b ; B. Tyburska-Pü ; schel^a ; P.M. Voyles^b ; K. Sridharan^a ; D. Morgan^a ; ^b ; I. Szlufarska^a ; ^b ; ^{szlufarska@wisc.edu}
• 关键词：Silicon carbide ; Black spot defects ; Cluster dynamics ; STEM ; TEM ; Size distribution
• 刊名：Acta Materialia
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：125
• 期：Complete
• 页码：377-389
• 全文大小：3289 K
• 卷排序：125

文摘

Distribution of black spot defects and small clusters in 1 MeV krypton irradiated 3C-SiC has been investigated using advanced scanning transmission electron microscopy (STEM) and TEM. We find that two thirds of clusters smaller than 1 nm identified in STEM are invisible in TEM images. For clusters that are larger than 1 nm, STEM and TEM results match very well. A cluster dynamics model has been developed for SiC to reveal processes that contribute to evolution of defect clusters and validated against the (S)TEM results. Simulations showed that a model based on established properties of point defects (PDs) generation, reaction, clustering, and cluster dissociation, is unable to predict black spot defects distribution consistent with STEM observations. This failure suggests that additional phenomena not included in a simple point-defect picture may contribute to radiation-induced evolution of defect clusters in SiC and using our model we have determined the effects of a number of these additional phenomena on cluster evolution. Using these additional phenomena it is possible to fit parameters within physically justifiable ranges that yield agreement between cluster distributions predicted by simulations and those measured experimentally.