Optimization and upscaling of spin coating with organosilane monolayers for low-k pore sealing

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• 作者：Yiting Sun^a ; ^b ; ^{Yiting.Sun@imec.be} ; Ainhoa Romo Negreira^c ; Johan Meersschaut^a ; Ilse Hoflijk^a ; Inge Vaesen^a ; Thierry Conard^a ; Herbert Struyf^a ; Zsolt Tokei^a ; Juergen Boemmels^a ; Mansour Moinpour^d ; Steven De Feyter^b ; Silvia Armini^a
• 关键词：Low-k ; Self-assembled monolayer ; SAM ; Spin coating ; Pore sealing
• 刊名：Microelectronic Engineering
• 出版年：2017
• 出版时间：5 January 2017
• 年：2017
• 卷：167
• 期：Complete
• 页码：32-36
• 全文大小：937 K
• 卷排序：167

文摘

SAMs are spin coated onto 300 mm low-k wafers. After SAMs deposition, ∆k is 0.1 and decreases to 0.03 after annealing. Solvent dielectric constant affect the pre-condensation of SAMs and therefore sealing. RBS measurements shows that SAMs seal against MnN by CVD but not TNT by PVD.