Linearity improvement of gm-boosted common gate LNA: Analysis to design

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• 作者：Ali Sahafi ; ^{a.sahafi@tabrizu.ac.ir" class="auth_mail" title="E-mail the corresponding author} ; ^{ali.sahafi@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Jafar Sobhi ; Ziaddin Daei Koozehkanani
• 关键词：Low noise amplifier ; Linearity ; Common gate LNA ; Bandwidth extension
• 刊名：Microelectronics Journal
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：56
• 期：Complete
• 页码：156-162
• 全文大小：2239 K

文摘

This paper proposes a highly linear low noise amplifier (LNA) for ultra-wideband applications. It focuses on linearization of the basic active gm-boosted common gate (CG) LNA circuit by exploring the nonlinearity coefficients using the generalized nonlinearity model. Mathematical analysis shows that in active gm-boosted CG LNA, the third input intercept point (IIP3) of LNA depends on interaction between main and auxiliary amplifiers. The multiple gated transistor (MGTR) technique, which was previously developed, is applied to an active gm-boosted CG amplifier based on linearity analysis. Also an improved shunt peaking bandwidth (BW) extension technique is proposed in this paper that extends the flat BW up to 200%. Post-layout simulation results of the proposed LNA circuit in a 180 nm RF CMOS process show +11 dBm of IIP3 that indicates 12 dB improvement comparing with conventional structures. The proposed wideband LNA has a voltage gain of 16 dB,−3 dB bandwidth from 1 GHz to 10.3 GHz, and minimum noise figure (NF) of 4.1 dB. The simulated S₁₁ is better than −10 dB in whole frequency range while the LNA core draws 6 mA from a single 1.8 V DC voltage supply.