Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes
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- 作者：A. Bravaixa ; alain.bravaix@isen.fr" class="auth_mail" title="E-mail the corresponding author ; F. Cachob ; X. Federspielb ; C. Ndiayea ; b ; S. Mhiraa ; b ; V. Huardb
- 关键词：Hot-carriers ; Healing techniques ; Charge neutralization ; FDSOI ; Forward back bias compensation
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：64
- 期：Complete
- 页码：163-167
- 全文大小：1616 K
文摘
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New healing techniques are used to neutralized hot-carriers damage.
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Charge neutralization allows to reduce damage under DC and AC operations.
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Compensating technique is developed by using forward bulk bias in FDSOI.
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Compensation is demonstrated in transistors and 28 nm CMOS ring-oscillators.
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These techniques enable to extend lifetime of digital applications.